English translation for "drain current"

漏电流
漏极电流

Related Translations:

drains:  疏水吸血

top draining:  地表排水

drain stem:  放泄杆

formed drain:  预制排水管

slag drain:  排渣沟

diffused drain:  扩散漏极

wound drain:  创口引流管创伤引流伤口引流器

drain resistance:  漏电阻

draining kit:  排水工具

basket drain:  排水蓝

Example Sentences:

	1.	In addition , we fabricated mesfet devices on lec si - gaas substrate and studied the relationship between these parameters and mesfet devices performance such as gm , saturated drain current and threshold voltage 并以lecsi - gaas晶体为衬底制作注入型mesfet器件，研究了gaas衬底的ab微缺陷和mesfet器件电性能(包括跨导、饱和漏电流和阈值电压)的关系。
	2.	The study shows that interface state charges not only increase the threshold voltage , but also lower the mosfet transconductance , drain current and field - effect mobility , which can well explain the results of experiment 分析结果显示界面态电荷不仅使阈值电压增大，而且还会导致器件漏电流减小，跨导和场效应迁移率降低，模拟结果能对实验现象做出很好的解释。
	3.	We probed into the most source - drain resistance and its temperature behavior particularly . the result of calculation indicated that the attenuation of source - drain current caused by the source - drain resistance increased when temperature increased 对寄生的漏源串联电阻及其温度特性进行了详细探讨，计算结果表明，漏源串联电阻给漏源电流造成的衰减在温度升高后变得很大。
	4.	The effect of interface state charges on the threshold voltage , drain current , transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution 建立界面态密度的指数分布模型，用数值方法较为详细的分析了界面态电荷对n沟mosfet器件阈值，漏电流，跨导和场效应迁移率的影响。
	5.	We discussed the influence of channel - length modulation effect and dibl effect to temperature behavior of source - drain current , gave a expressions for studying the temperature characteristic of source - drain current , and deduced a ztc point expression 研究了沟长调制效应和漏致势垒降低效应对漏源电流温度特性的影响，给出了一个用于研究漏源电流温度特性的电流公式；并推导了短沟道most的ztc点公式。
	6.	In gan hemt gate pulse experiments , drain current under pulse conditon collapsed about 47 % than direct current condition and the pulse width affected little on current collapse . the relationship between drain current and pulse frequency is ncoxw [ m + ( n + k ? ) vgs + ( n + k ? ) vgs2 ] ( vgs - vth ) 2 / l 在ganhemt栅极脉冲电流崩塌测试中,观察到栅脉冲条件下漏极电流比直流情况下减小了47 % ;随着信号频率的改变,漏极电流按ncoxw [ m + ( n + k
	7.	Physics device model , component structure design and fabrication technology are discussed based on the thorough analysis of strained silicon and soi physics mechanism . the detail contents are as follows . the analytical threshold voltage model , drain current model and transconductance model are derived from poisson ’ s equation for the fully depleted strained soi mosfet 本论文围绕这一微电子领域发展的前沿课题,在深入分析应变硅和soi物理机理的基础上,对器件的物理模型、器件结构设计和工艺实验等问题作了研究,主要包括以下几部分:首先,从器件的物理机制出发,建立主要针对薄膜全耗尽型器件的阈值电压、输出电流和跨导模型。
	8.	In gan hemt drain pulse current collapse experiments , drain current under pulse condition collapsed about 50 % than direct current condition and the pulse signal frequency affected little on current collapse . when gate voltage is small , the relationship between pulse width and drain current is i0 ( + t / 16 ) 在ganhemt漏极脉冲电流崩塌测试中,发现脉冲条件下漏极电流比直流时减小大约50 % ;脉冲信号频率对电流崩塌效应影响较小;当栅压较小时,随着脉冲宽度的改变漏极电流按i0 ( + t / 16 )的规律变化。
	9.	The emphases of our research works are as follows : under ultra - low temperature ( about 0 . 236k ) conditions , how the frequency and power of the saw and the source drain voltage influence the acoustic current ; and the relationship between the source drain current and the split - gate voltage ; and how to find the cut off voltage of the quasi - 1d electron channel ; and also the frequency character of the idt in the saw parts 研究的重点为,在甚低温( 0 . 236k )下,通过实验研究表面声波的频率和功率,源漏偏压等因素对声电电流的影响;研究准一维电子通道中不同源漏电流与分裂门负偏压的关系,以找到分裂门的钳断点电压;以及研究声表面器件叉指换能器的频率特性等。
	10.	After structure design aimed to high transconductance , parameters of device structure are modified in detail . the simulation results of soi nmos with strained si channel show great enhancements in drain current , effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet . the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide 其次,根据器件参量对阈值电压和输出特性的影响,以提高器件的跨导和电流驱动能力为目的设计了strained - soimosfet器件结构,详细分析栅极类型和栅氧化层厚度、应变硅层厚度、 ge组分、埋氧层深度和厚度以及掺杂浓度的取值,对器件进行优化设计。

Similar Words：

"drain control" English translation, "drain cooler" English translation, "drain cover" English translation, "drain cramp" English translation, "drain cup" English translation, "drain cut off current" English translation, "drain d c voltage" English translation, "drain diffusion" English translation, "drain digger" English translation, "drain district" English translation